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1

[IEEE 21st European Microwave Conference, 1991 - Stuttgart, Germany (1991.10.4-1991.10.6)] 21st European Microwave Conference, 1991 - Microwave Performance of Dual-Gate Cascode MESFET and HEMT Devices with High Gain at Low Noise Levels

Wenger, J., Narozny, P., Dambkes, H., Splettstober, J., Werres, C.

Year:

1991

Language:

english

File:

PDF, 484 KB

english, 1991

2

Subthreshold current in submicron AlGaAs/GaAs MODFETs

Q. Chen, M. Willander, P. Narozny, H. Dämbkes

Journal:

Solid-State Electronics

Year:

1992

Language:

english

File:

PDF, 292 KB

english, 1992

3

SiGe HBTs and HFETs

U König, H Dämbkes

Journal:

Solid-State Electronics

Year:

1995

Language:

english

File:

PDF, 894 KB

english, 1995

4

Pseudomorphic GaxIn1−xAs on InP for HEMT structures grown by MBE

H. Künzel, H.G. Bach, J. Böttcher, J. Dickmann, H. Dämbkes, G. Nachtwei, S. Heide

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 280 KB

english, 1992

5

Gallium arsenide HEMTs for low-noise GHz communications engineering

Heinrich Dämbkes

Journal:

Microelectronics Journal

Year:

1989

Language:

english

File:

PDF, 407 KB

english, 1989

6

Si/SiGe heterojunction bipolar transistor made by molecular-beam epitaxy

Narozny, P., Dambkes, H., Kibbel, H., Kasper, E.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 470 KB

english, 1989

7

Influence of surface layers on the RF-performance of AlInAs-GaInAs HFETs

J. Dickmann, K. Dambkes, H. Nickel, R. Losch, W. Schlapp, J. Bottcher, K. Kunzel

Journal:

IEEE Microwave and Guided Wave Letters

Year:

1992

File:

PDF, 218 KB

1992

8

[IEEE Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting BIPOL-93 - Minneapolis, MN, USA (1994.10.10-1994.10.11)] Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting BIPOL-93 - Thermally triggered collapse of collector current in power heterojunction bipolar transistors

Seiler,, Koenig,, Narozny,, Dambkes,

Year:

1993

Language:

english

File:

PDF, 491 KB

english, 1993

9

[IRE 1983 International Electron Devices Meeting - ()] 1983 International Electron Devices Meeting - Deep level analysis in (AlGa)As-GaAs MODFETs by means of low frequency noise measurements

Loreck, L., Dambkes, H., Heime, K., Ploog, K.

Year:

1983

Language:

english

File:

PDF, 335 KB

english, 1983

10

[IEEE Technical Digest., International Electron Devices Meeting - San Francisco, CA, USA (11-14 Dec. 1988)] Technical Digest., International Electron Devices Meeting - Very low temperature MBE process for SiGe and Si device structures

Kasper, E., Dambkes, H., Luy, J.

Year:

1988

File:

PDF, 246 KB

1988

11

[IEEE GaAs IC Symposium Technical Digest 1992 - Miami Beach, FL, USA (4-7 Oct. 1992)] GaAs IC Symposium Technical Digest 1992 - Advances in CPW-design applied to monolithic integrated Ka-band MESFET and HEMT-amplifiers on GaAs

Kosslowski, S., Bertenburg, R., Koster, N.H.L., Wolff, I., Tegude, F.-J., Narozny, P., Wenger, J., Dambkes, H.

Year:

1992

Language:

english

File:

PDF, 453 KB

english, 1992

12

Deep-level analysis in (AlGa)As—GaAs 2-D electron gas devices by means of low-frequency noise measurements

Loreck, L., Dambkes, H., Heime, K., Ploog, K., Weimann, G.

Journal:

IEEE Electron Device Letters

Year:

1984

Language:

english

File:

PDF, 277 KB

english, 1984

13

[IEEE Technical Digest., International Electron Devices Meeting - San Francisco, CA, USA (11-14 Dec. 1988)] Technical Digest., International Electron Devices Meeting - Si/SiGe heterojunction bipolar transistor with graded gap SiGe base made by molecular beam epitaxy

Narozny, P., Hamacher, M., Dambkes, H., Kibbel, H., Kasper, E.

Year:

1988

File:

PDF, 240 KB

1988

14

[IEEE IEEE NTC '95 The Microwave Systems Conference. Conference - Orlando, FL, USA (17-19 May 1995)] IEEE NTC,Conference Proceedings Microwave Systems Conference - Advanced MMIC components for Ka-band communications systems. A survey

Dieudonne, J.-M., Adelseck, B., Narozny, P., Dambkes, H.

Year:

1995

Language:

english

File:

PDF, 862 KB

english, 1995

15

[IEEE 1999 IEEE MTT-S International Microwave Symposium Digest - Anaheim, CA, USA (13-19 June 1999)] 1999 IEEE MTT-S International Microwave Symposium Digest (Cat. No.99CH36282) - Full MMIC millimeter-wave front end for a 76.5 GHz adaptive cruise control car radar

Camiade, M., Domnesque, D., Alleaume, P.F., Mallet, A., Pons, D., Dambkes, H.

Year:

1999

Language:

english

File:

PDF, 334 KB

english, 1999

16

[IEEE 1995 IEEE MTT-S International Microwave Symposium - Orlando, FL, USA (16-20 May 1995)] Proceedings of 1995 IEEE MTT-S International Microwave Symposium - Advanced MMIC components for Ka-band communications systems. A survey

Dieudonne, J.-M., Adelseck, B., Narozny, P., Dambkes, H.

Year:

1995

Language:

english

File:

PDF, 382 KB

english, 1995

17

[IEEE 23rd European Microwave Conference, 1993 - Madrid, Spain (1993.10.4-1993.10.6)] 23rd European Microwave Conference, 1993 - InP based high gain Ka-band three stage coplanar waveguide monolithic amplifier

Kosslowski, S., Dickmann, J., Narozny, P., Geyer, A., Maile, B.E., Schurr, A., Haspeklo, H., Wolk, C., Dambkes, H., Wolff, I.

Year:

1993

Language:

english

File:

PDF, 4.81 MB

english, 1993

18

[IEEE Third International Conference Indium Phosphide and Related Materials - Cardiff, UK (8-11 April 1991)] [Proceedings 1991] Third International Conference Indium Phosphide and Related Materials - Influence of a surface layer on DC- and RF-performance of AlInAs/GaInAs HFETs

Dickmann, J., Dambkes, H., Nickel, H., Losch, R., Schlapp, W., Ploog, K., Zhang, Y.H., Bottcher, J., Kunzel, H.

Year:

1991

Language:

english

File:

PDF, 293 KB

english, 1991

19

Low-noise pseudomorphic dual-gate cascode HEMTs with extremely high gain

Wenger, J., Narozny, P., Dambkes, H., Splettstosser, J., Werres, C.

Journal:

IEEE Microwave and Guided Wave Letters

Year:

1992

File:

PDF, 444 KB

1992

20

[IEEE Third International Conference Indium Phosphide and Related Materials - Cardiff, UK (8-11 April 1991)] [Proceedings 1991] Third International Conference Indium Phosphide and Related Materials - Material characterisation of InGaAs/InAlAs heterostructure field effect transistors with heavily doped n-type InAlAs donor layer

Heedt, C., Gottwald, P., Prost, W., Tegude, F.J., Kunzel, H., Dickmann, J., Dambkes, H.

Year:

1991

Language:

english

File:

PDF, 250 KB

english, 1991

21

[IEEE 21st European Microwave Conference, 1991 - Stuttgart, Germany (1991.10.4-1991.10.6)] 21st European Microwave Conference, 1991 - Pseudomorphic AIGaAs/GaInAs Hetero-FET Structures for Low Noise and Power Applications

Narozny, P., Dambkes, H., Dickmann, J., Wolk, C., Adam, D., Barbier, E., Pons, D.

Year:

1991

Language:

english

File:

PDF, 223 KB

english, 1991

22

[IRE 1983 International Electron Devices Meeting - ()] 1983 International Electron Devices Meeting - GaAs—MESFETs with highly doped (1018cm-3) channels—An experimental and numerical investigation

Dambkes, H., Brockerhoff, W., Heime, K.

Year:

1983

Language:

english

File:

PDF, 433 KB

english, 1983

23

Hot carrier light emission from GaAs HEMT devices

Ostermeir, R, Koch, F, Brugger, H, Narozny, P, Dambkes, H

Journal:

Semiconductor Science and Technology

Year:

1992

Language:

english

File:

PDF, 174 KB

english, 1992

24

Band-structure effects in the hot-carrier emission spectrum of GaAs FET devices

Ostermeir, R, Koch, F, Brugger, H, Narozny, P, Dambkes, H

Journal:

Semiconductor Science and Technology

Year:

1994

Language:

english

File:

PDF, 283 KB

english, 1994

25

Synthesis of Josiphos-Type Bisphospholane Ligands

Hammerer, Tim, Dämbkes, Andrea, Braun, Wolfgang, Salzer, Albrecht, Franciò, Giancarlo, Leitner, Walter

Journal:

Year:

2012

Language:

english

File:

PDF, 294 KB

english, 2012

26

Über die präparative Nutzung der 1,3-Thiazoliumsalz-katalysierten Acyloin- und Benzoin-Bildung; III 1 . Eine neue Methode zur Herstellung von substituierten Enol-trimethylsilyl-ethern des 1,2-Cyclopentandions

Stetter, Hermann, Dämbkes, Georg

Journal:

Year:

1980

File:

PDF, 129 KB

1980

27

Über die präparative Nutzung der Thiazoliumsalz-katalysierten Acyloin- und Benzoin-Bildung; II 1 . Herstellung unsymmetrischer Acyloine und α-Diketone

STETTER, Hermann, DÄMBKES, Georg

Journal:

Year:

1977

File:

PDF, 121 KB

1977